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| NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBD7000 DUAL SMALL SIGNAL SWITCHING DIODE SOT-23 Top View .056 (1.43) .052 (1.33) .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES Silicon Epitaxial Planar Diode Fast switching dual diode, especially suited for automatic insertion. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) MECHANICAL DATA Case: SOT-23 (TO-236AB) Plastic Package Weight: approx. 0.008 g Marking Code: M5C .045 (1.15) .037 (0.95) .102 (2.6) .094 (2.4) .016 (0.4) .016 (0.4) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified (per diode) SYMBOL VALUE UNIT Reverse Voltage Forward Current (continuous) Non-Repetitive Peak Forward Current at t = 1s Power Dissipation on FR-5 Board TA = 25C Derate above 25C Total Device Dissipation on Alumina Substrate, TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Air Maximum Junction Temperature Storage Temperature Range NOTES (1) On Alumina Substrate (2) On FR-5 Board VR IF IFSM Ptot Ptot 100 200 500 225 1.8 300 2.4 417(1) 556(2) 150 55 to +150 Volts mA mA mW mW/C mW mW/C C/W C C RQJA Tj TS 2/11/99 MMBD7000 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified (per diode). SYMBOL MIN. MAX. UNIT Reverse Breakdown Voltage at IR=100mA Leakage Current at VR = 50 V at VR = 100 V at VR = 50 V, Tj = 125C Forward Voltage at IF = 1mA at IF = 10mA at IF = 100mA Capacitance at VR = 0; f = 1MHZ Reverse Recovery Time from IF = 10mA to IR = 10 mA measured at Irr = 1mA, RL = 100 W VBR IR IR IR 100 - 1.0 3.0 100 Volts mA mA mA Volts Volts Volts pF VF VF VF Ctot 0.55 0.67 0.75 - 0.70 0.82 1.10 1.5 trr - 4.0 ns |
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